采用共蒸发法在不同衬底温度下沉积Cu2ZnSnSe4（简称CZTSe)薄膜, 分析了衬底温度对CZTSe材料性质及电池性能的影响。研究表明: 当衬底温度较低时（380 ℃), CZTSe薄膜中含有SnSex使电池失效; 随着衬底温度的升高, CZTSe薄膜的结晶质量明显提升, 电池开路电压增加。但当衬底温度达到460 ℃时, 电池的转换效率反而下降; 结合CZTSe的生长机理及器件模型分析了电池效率下降可能的原因。最终在衬底温度420 ℃的条件下制备出效率为3.12%（有效面积0.34 cm2)的CZTSe太阳电池。

Cu2ZnSnSe4 (CZTSe) absorbers were deposited on borosilicate glass substrate using the low-temperature process, and different Na incorporation methods were applied to investigate the effects of Na on the CZTSe growth. Na was dif-fused into some of the absorbers after growth, which led to strongly improved device performance compared with Na-free cells. With the post-deposition treatment, the effect of Na on CZTSe growth was excluded, and most of Na was expected to reside at grain boundaries. The conversion efficiency of the completed device was improved due to the enhancement of open circuit voltage and fill factor. The efficiency of 2.85% was achieved at substrate temperature as low as 420 ℃.

基于非晶硅薄膜的非制冷微测辐射热计具有结构简单、易于大规模集成、工艺兼容以及良好探测性能等特点，在红外探测领域等受到关注。引入氮化钛薄膜作为新型红外吸收材料，通过光学导纳矩阵法，对基于非晶硅薄膜的微测辐射热计的红外吸收特性，进行了仿真和优化研究。结果表明，非晶硅微测辐射热计中，氮化钛/非晶硅复合薄膜具有良好的红外吸收性能。当非晶硅薄膜厚度为120 nm时，由氮化钛/非晶硅组成的膜系在8～14 μm范围内具有96%左右的红外吸收率，其中氮化钛薄膜的最佳吸收厚度为32 nm。